Hybrid WS ₂ ‐Based Memristor With Tunable Conductance Modulation for Neuromorphic and Nociceptive Learning

Abstract Here, a high‐performance memristive device that integrates a layered WS ₂ switching medium with a TiO _x ‐rich interface and a BaTiO ₃ (BTO) dielectric layer is reported. This hybrid structure exploits the defect tunability of WS ₂ to regulate oxygen vacancy dynamics, while BaTiO ₃ enhances electric‐field stabilization and TiO _x acts as a redox‐controlling barrier. The device exhibits analog multilevel switching at low voltages (±0.5 V), a wide memory window (>10), stable retention beyond 10⁴ s, pulse endurance exceeding 10⁵ cycles, and ultralow switching energy (≈54.7 pJ per event). Uniform switching is achieved, with cycle‐to‐cycle variation of 3.6% and 2.3% for Set and Reset states, respectively. Discrete 5‐bit (32‐level) resistance states are realized under DC sweeps, enabling high‐density memory storage. A broad range of synaptic plasticity features such as long‐term potentiation (LTP), long‐term depression (LTD), paired‐pulse facilitation (PPF), post‐tetanic potentiation (PTP), spike‐number‐dependent plasticity (SADP) and spike‐amplitude‐dependent plasticity (SADP) ‐ are successfully reproduced. Furthermore, the incremental step pulse with verify algorithm (ISPVA) algorithm enables precise 4–6‐bit conductance modulation with enhances linearity, symmetry, and suppress variability. The device also mimicked nociceptor‐like behaviors including no adaptation, allodynia, and hyperalgesia. When integrated into an artificial neural network (ANN)ANN, the device achieves a recognition accuracy of 97.4% on the MNIST dataset. These results establish the WS ₂ ‐based hybrid memristor as a strong candidate for energy‐efficient neuromorphic and adaptive sensory applications.