Topotactic Phase Transformation in Vanadium Dioxide through Oxygen Vacancy Ordering with Synergistic Electron Doping via Hydrogenation
Source abstract
Abstract
Abstract Controlling the insulator‐metal transition (IMT) in correlated oxide system through oxygen vacancy ordering opens up a new paradigm for unlocking exotic structural transformation and physical functionality. Oxygen vacancies serve as a powerful tuning knob for adjusting the IMT property of VO 2 , though driving topochemical reduction to V 2 O 3 remains rather challenging due to structural incompatibility and competing phase instability. Here, a consecutive oxygen‐vacancy‐driven VO 2 ‐VO 2‐x ‐V 2 O 3 topotactic phase transformation route is demonstrated with pronounced facet‐dependent anisotropy, engendering widely tunable IMT properties across an extended temperature range over 200 K. Remarkably, topochemically reduced V 2 O 3 inherits the crystallographic characteristics from parent VO 2 , enabling the possibility of accessing exotic lattice framework with tunable IMT behaviors. Analogous electron doping arising from hydrogenation and oxygen vacancies contributes cooperatively to drive Mott phase transition in VO 2 through band‐filling control, while ionic interactions between protons and oxygen vacancies markedly accelerate the oxygen ionic mobility. The work not only establishes a framework for engineering physical functionality through defect‐mediated topotactic transition and band filling but also provides fundamentally new insights for filling‐controlled Mott physics.
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Research context
OpenAlex topics: Transition Metal Oxide Nanomaterials · Catalysis and Oxidation Reactions · Physics of Superconductivity and Magnetism
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education & School of Materials Science and Engineering Shanxi Normal University Taiyuan 030031 China
Research Institute of Materials Science, Shanxi Key Laboratory of Advanced Magnetic Materials and Devices Shanxi Normal University Taiyuan 030031 China
Funding
National Natural Science Foundation of China
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