Kinetically Tailored Chemical Vapor Deposition Approach for Synthesizing High‐Quality Large‐Area Non‐Layered 2D Materials

Abstract Non‐layered 2D materials offer unique and more advantageous physicochemical properties than those of conventional 2D layered materials. However, the isotropic chemical bonding nature of non‐layered materials hinders their lateral growth, making the synthesis of large‐area continuous thin films challenging. Herein, a facile kinetically tailored chemical vapor deposition (KT‐CVD) approach is introduced for the synthesis of 2D molybdenum nitride (MoN), a representative non‐layered material. Large‐scale thin films of MoN with lateral dimensions of up to 1.5 cm × 1.5 cm are obtained by modulating the vapor pressure of nitrogen feedstock and disrupting the thermodynamically favored growth kinetics of non‐layered materials. The growth of stable crystalline phases of MoN (δ‐MoN and γ‐Mo₂N) is also realized using the proposed KT‐CVD approach. The δ‐MoN synthesized via KT‐CVD demonstrates excellent surface‐enhanced Raman scattering and robust thermal stability. This study provides an effective strategy for developing scalable and high‐quality non‐layered 2D materials, expanding the fabrication and application of devices based on non‐layered materials.