Tip‐based Lithography with a Sacrificial Layer

Abstract The fabrication of a highly controlled gold (Au) nanohole (NH) array via tip‐based lithography is improved by incorporating a sacrificial layer—a tip‐crash buffer layer. This inclusion mitigates scratches during the nano‐indentation process by employing a 300 nm thick poly(methyl methacrylate) layer as a sacrificial layer on top of the Au film. Such a precaution ensures minimal scratches on the Au film, facilitating the creation of sub‐50 nm Au NHs with a 15 nm gap between the Au NHs. The precision of this method exceeds that of fabricating Au NHs without a sacrificial layer. Demonstrating its versatility, this Au NH array is utilized in two distinct applications: as a dry etching mask to form a molybdenum disulfide hole array and as a catalyst in metal‐assisted chemical etching, resulting in conical‐shaped silicon nanostructures. Additionally, a significant electric field is generated when Au nanoparticles (NPs) are placed within the Au NHs. This effect arises from coupling electromagnetic waves, concentrated by the Au NHs and amplified by the Au NPs. A notable result of this configuration is the enhancement factor of surface‐enhanced Raman scattering, which is an order of magnitude greater than that observed with just Au NHs and Au NPs alone.