journal article·2025-06

The Planar Architecture of Silicon Anode Enables Stress Relief in Stable Lithium‐Ion Batteries

Jie Zeng, Yuan Kun Hong, Ying Yan Hu, Xiao Ming Xu, Yu Long Sun, Sayed Y. Attia, Ting Liu, Xian Bin Liu, Zi Ping Wu

Small· Volume 21· Issue 22
Publisher page

Abstract

Abstract Silicon is a promising anode for lithium‐ion batteries but suffers tremendous volume change during cycling. Scalable and low‐cost fabrication of silicon anodes with minimized internal stress, avoiding electrode degradation and capacity decline, remains a significant challenge. Herein, a planar silicon demonstrates internal stress release in the electrode at electrochemical cycling, which indicates a favorable areal capacity of 3.4 mAh cm −2 and a stable specific capacity of 810 mAh g −1 even after 600 cycles at a remarkable current density of 3.6 A g −1 . Such good results are mainly ascribed to the planar structure that changes the expansion direction, which enables stress relief in the electrode. In addition, the planar structure provides abundant contact area, which aligns the anode stack and then shortens the ion diffusion. This work demonstrates useful insights on stress release through structure engineering and revolutionizes the traditional design for lithium‐ion batteries, ensuring energy storage devices transcend current limitations.
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Research context

OpenAlex topics: Advancements in Battery Materials · Supercapacitor Materials and Fabrication · Advanced Battery Materials and Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Faculty of Materials Metallurgy and Chemistry Jiangxi University of Science and Technology (JXUST) 86 Hongqi Road Ganzhou 341000 China

Jiangxi Anchi New Energy Technology Co.,Ltd 128 Xingye Avenue Shangrao 334000 China

Mining and Metallurgical Engineering Department Tabbin Institute for Metallurgical Studies 109 Helwan Tabbin Cairo 11421 Egypt

Funding

National Natural Science Foundation of China · Jiangxi Provincial Department of Science and Technology

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