Electrodynamic Force, Casimir Effect, and Stiction Mitigation in Silicon Carbide Nanoelectromechanical Switches

Abstract Logic switches enabled by nanoelectromechanical systems (NEMS) offer abrupt on/off‐state transition with zero off‐state leakage and minimal subthreshold swing, making them uniquely suited for enhancing mainstream electronics in a range of applications, such as power gating, high‐temperature and high‐voltage logic, and ultralow‐power circuits requiring zero standby leakage. As NEMS switches are scaled with genuinely nanoscale gaps and contacts, quantum mechanical electrodynamic force (EDF) takes an important role and may be the ultimate cause of the plaguing problem of stiction. Here, combined with experiments on three‐terminal silicon carbide (SiC) NEMS switches, a theoretical investigation is performed to elucidate the origin of EDF and Casimir effect leading to stiction, and to develop a stiction‐mitigation design. The EDF calculation with full Lifshitz formula using the actual material and device parameters is provided. Finite element modeling and analytical calculations demonstrate that EDF becomes dominant over elastic restoring force in such SiC NEMS when the switching gap shrinks to a few nanometers, leading to irreversible stiction at contact. Artificially corrugated contact surfaces are designed to reduce the contact area and the EDF, thus evading stiction. This rational surface engineering reduces the EDF down to 4% compared with the case of unengineered, flat contact surfaces.