High‐Speed Colloidal Quantum Dot Photodiodes via Accelerating Charge Separation at Metal–Oxide Interface
Source abstract
Abstract
Abstract With ever‐growing technological demands in the imaging sensor industry for autonomous driving and augmented reality, developing sensors that can satisfy not only image resolution but also the response speed becomes more challenging. Herein, the focus is on developing a high‐speed photosensor capable of obtaining high‐resolution, high‐speed imaging with colloidal quantum dots (QDs) as the photosensitive material. In detail, high‐speed QD photodiodes are demonstrated with rising and falling times of τr = 28.8 ± 8.34 ns and τf = 40 ± 9.81 ns, respectively, realized by fast separation of electron–hole pairs due to the action of internal electric field at the QD interface, mainly by the interaction between metal oxide and the QD's ligands. Such energy transfer relations are analyzed and interpreted with time‐resolved photoluminescence measurements, providing physical understanding of the device and working principles.
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Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Electronic and Structural Properties of Oxides · Perovskite Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Nanophotonics Research Center Korea Institute of Science and Technology (KIST) Seoul 02792 Republic of Korea
School of Electrical Engineering Korea University Seoul 02841 Republic of Korea
Quantum‐functional Semiconductor Research Center Dongguk University Seoul 04620 Republic of Korea
Department of Converging Science and Technology Kyung Hee University Seoul 02453 Republic of Korea
Harvard John A. Paulson School of Engineering and Applied Sciences Harvard University Cambridge MA 02138 USA
Department of Advanced Materials Engineering for Information and Electronics Kyung Hee University Yongin 17104 Republic of Korea
Funding
National Research Foundation of Korea
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