Room Temperature Magnetic Graphene Oxide‐ Iron Oxide Nanocomposite Based Magnetoresistive Random Access Memory Devices via Spin‐Dependent Trapping of Electrons
Source abstract
Abstract
A MRAM device is fabricated using magnetic graphene oxide- iron oxide nanoparticles nanocomposites together with a platinum electrode and a ferromagnetic cobalt electrode. The device allow for a positive magnetoresistance up to 280% via the spin-dependent trapping of charge carriers. Its low resistance state can be restored by releasing the trapped charges by reversing the direction of current flow together with the magnetic field orientation.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Magnetic properties of thin films · Quantum and electron transport phenomena
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
NUS Graduate School of Integrative Sciences and Engineering National University of Singapore 28 Medical Drive Singapore 117456
Department of Physics Faculty of Science, National University of Singapore 2 Science Drive 3 Singapore 117542
Division of Physics and Applied Physics Nanyang Technological University 21 Nanyang Link Singapore 637371
Department of Chemistry, Faculty of Science National University of Singapore 3 Science Drive 3 Singapore 117543
References (25)
Show source-provided references
1. 10.1103/RevModPhys.76.32310.1103/RevModPhys.76.323 ↗
2. 10.1511/2001.6.51610.1511/2001.6.516 ↗
3. 10.1126/science.282.5394.166010.1126/science.282.5394.1660 ↗
4. 10.1126/science.106538910.1126/science.1065389 ↗
5. 10.1039/b818851n10.1039/b818851n ↗
6. 10.1038/nature0232510.1038/nature02325 ↗
7. 10.1038/nmat203410.1038/nmat2034 ↗
8. Krepl F. · Proc. IEEE Electron Devices · 2008 · 521
9. 10.1038/nmat233110.1038/nmat2331 ↗
10. 10.1021/nl801774a10.1021/nl801774a ↗
11. 10.1002/adma.20090346910.1002/adma.200903469 ↗
12. 10.1146/annurev-matsci-082908-14535510.1146/annurev-matsci-082908-145355 ↗
13. 10.1103/PhysRevLett.61.247210.1103/PhysRevLett.61.2472 ↗
14. 10.1103/PhysRevB.39.482810.1103/PhysRevB.39.4828 ↗
15. 10.1063/1.36549910.1063/1.365499 ↗
16. 10.1063/1.133056210.1063/1.1330562 ↗
17. 10.1038/ncomms293510.1038/ncomms2935 ↗
18. 10.1038/ncomms231510.1038/ncomms2315 ↗
19. Mott N. F. · 1979
20. Anderson P. W. · Phys. Rev. · 1958 · 109 · 483
21. Shklovskii B. I. · 1991
22. 10.1103/PhysRevB.55.806710.1103/PhysRevB.55.8067 ↗
23. 10.1103/PhysRevLett.81.398010.1103/PhysRevLett.81.3980 ↗
24. 10.1093/acprof:oso/9780198570752.001.000110.1093/acprof:oso/9780198570752.001.0001 ↗
25. 10.1007/978-3-662-02403-410.1007/978-3-662-02403-4 ↗