Atomically Precise Control of Carbon Insertion into hBN Monolayer Point Vacancies using a Focused Electron Beam Guide
Source abstract
Abstract
Abstract Precise controlled filling of point vacancies in hBN with carbon atoms is demonstrated using a focused electron beam method, which guides mobile C atoms into the desired defect site. Optimization of the technique enables the insertion of a single C atom into a selected monovacancy, and preferential defect filling with sub‐2 nm accuracy. Increasing the C insertion process leads to thicker 3D C nanodots seeded at the hBN point vacancy site. Other light elements are also observed to bind to hBN vacancies, including O, opening up a wide range of complex defect structures that include B, C, N, and O atoms. The ability to selectively fill point vacancies in hBN with C atoms provides a pathway for creating non‐hydrogenated covalently bonded C molecules embedded in the insulating hBN.
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Research context
OpenAlex topics: Semiconductor materials and devices · Diamond and Carbon-based Materials Research · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Texas Materials Institute The University of Texas at Austin 204 East Dean Keeton Street Austin TX 78712 USA
Walker Department of Mechanical Engineering The University of Texas at Austin 204 East Dean Keeton Street Austin TX 78712 USA
Department of Materials University of Oxford Parks Road Oxford OX1 3PH UK
Department of Chemical Engineering Massachusetts Institute of Technology Cambridge MA 02139 USA
Department of Materials Science and Engineering Seoul National University Gwanak‐gu Seoul 08826 Republic of Korea
Research Institute of Advanced Materials Seoul National University Gwanak‐gu Seoul 08826 Republic of Korea
Funding
National Research Foundation of Korea
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