Mass Fabrication of 3D Silicon Nano‐/Microstructures by Fab‐Free Process Using Tip‐Based Lithography
Source abstract
Abstract
Abstract Methods for the mass fabrication of 3D silicon (Si) microstructures with a 100 nm resolution are developed using scanning probe lithography (SPL) combined with metal‐assisted chemical etching (MACE). Protruding Si structures, including Si nanowires of over 10 µm in length and atypical shaped Si nano‐ and micropillars, are obtained via the MACE of a patterned gold film (negative tone) on Si substrates by dip‐pen nanolithography (DPN) with polymer or by nanoshaving alkanethiol self‐assembled monolayers (SAMs). Furthermore, recessed Si structures with arbitrary patterning and channels less than 160 nm wide and hundreds of nanometers in depth are obtained via the MACE of a patterned gold film (positive tone) on Si substrates by alkanethiol DPN. As an example of applications using protruded Si structures, nanoimprinting in an area of up to a centimeter is demonstrated through 1D and 2D SPL combined with MACE. Similarly, submicrometer polydimethylsiloxane (PDMS) stamps are employed over millimeter‐scale areas for applications using recessed Si structures. In particular, the mass production of arbitrarily shaped Si microparticles at submicrometer resolution is developed using silicon‐on‐insulator substrates, as demonstrated using optical microresonators, surface‐enhanced Raman scattering templates, and smart microparticles for fluorescence signal coding.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Nanowire Synthesis and Applications · Nanofabrication and Lithography Techniques · Force Microscopy Techniques and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Division of Physics and Semiconductor Science Dongguk University Seoul 04620 Republic of Korea
Department of Nano and Electronic Physics Kookmin University Seoul 02707 Republic of Korea
Department of Chemistry Duke University Durham NC 27708 USA
Department of Physics Pukyong National University Busan 48513 Republic of Korea
Funding
National Research Foundation of Korea · Ministry of Education, Science and Technology
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