journal article·2009-07-28

Electronic Transport and Mechanical Properties of Phosphorus- and Phosphorus−Nitrogen-Doped Carbon Nanotubes

Eduardo Cruz-Silva, Florentino López-Urías, Emilio Muñoz-Sandoval, Bobby G. Sumpter, Humberto Terrones, Jean-Christophe Charlier, Vincent Meunier, Mauricio Terrones

ACS Nano· Volume 3· Issue 7
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Abstract

We present a density functional theory study of the electronic structure, quantum transport and mechanical properties of recently synthesized phosphorus (P) and phosphorus-nitrogen (PN) doped single-walled carbon nanotubes. The results demonstrate that substitutional P and PN doping creates localized electronic states that modify the electron transport properties by acting as scattering centers. Nonetheless, for low doping concentrations (1 doping site per ∼200 atoms), the quantum conductance for metallic nanotubes is found to be only slightly reduced. The substitutional doping also alters the mechanical strength, leading to a 50% reduction in the elongation upon fracture, while Young's modulus remains approximately unchanged. Overall, the PN- and P-doped nanotubes display promising properties for components in composite materials and, in particular, for fast response and ultra sensitive sensors operating at the molecular level.
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Research context

OpenAlex topics: Carbon Nanotubes in Composites · Boron and Carbon Nanomaterials Research · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Laboratory for Nanoscience and Nanotechnology Research (LINAN) and Advanced Materials Department, IPICyT. Camino a la Presa Sn. Jose 2055, San Luis Potosí, Mexico, 78216

Oak Ridge National Laboratory, P.O. Box 2008, MS6367, Oak Ridge, Tennessee 37831-6367

Université Catholique de Louvain, PCPM & ETSF, Place Croix du Sud 1, B-1348 Louvain-la-Neuve, Belgium

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