journal article·2013-06-25

Repeated and Controlled Growth of Monolayer, Bilayer and Few-Layer Hexagonal Boron Nitride on Pt Foils

Yang Gao, Wencai Ren, Teng Ma, Zhibo Liu, Yu Zhang, Wen-Bin Liu, Lai-Peng Ma, Xiuliang Ma, Hui-Ming Cheng

ACS Nano· Volume 7· Issue 6
Publisher page

Abstract

Atomically thin hexagonal boron nitride (h-BN), as a graphene analogue, has attracted increasing interest because of many fascinating properties and a wide range of potential applications. However, it still remains a great challenge to synthesize high-quality h-BN with predetermined number of layers at a low cost. Here we reported the controlled growth of h-BN on polycrystalline Pt foils by low-cost ambient pressure chemical vapor deposition with ammonia borane as the precursor. Monolayer, bilayer and few-layer h-BN domains and large-area films were selectively obtained on Pt by simply changing the concentration of ammonia borane. Moreover, using a bubbling method, we have achieved the nondestructive transfer of h-BN from Pt to arbitrary substrates and the repeated use of the Pt for h-BN growth, which not only reduces environmental pollution but also decreases the production cost of h-BN. The monolayer and bilayer h-BN obtained are very uniform with high quality and smooth surfaces. In addition, we found that the optical band gap of h-BN increases with decreasing number of layers. The repeated growth of large-area, high-quality monolayer and bilayer h-BN films, together with the successful growth of graphene, opens up the possibility for creating various functional heterostructures for large-scale fabrication and integration of novel electronics.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Graphene research and applications · 2D Materials and Applications · MXene and MAX Phase Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, People’s Republic of China,

State Key Laboratory of Robotics, Shenyang Institute of Automation, Chinese Academy of Sciences, 114 Nanta Street, Shenyang 110016, People’s Republic of China

References (38)

Show source-provided references
1. Novoselov K. S. · Science · 2004 · 306 · 66610.1126/science.1102896 ↗
2. Geim A. K. · Nat. Mater. · 2007 · 6 · 18310.1038/nmat1849 ↗
3. Geim A. K. · Science · 2009 · 324 · 153010.1126/science.1158877 ↗
4. Kubota Y. · Science · 2007 · 317 · 93210.1126/science.1144216 ↗
5. Sugino T. · Jpn. J. Appl Phys., Part 2 · 2000 · 39 · L110110.1143/JJAP.39.L1101 ↗
6. Ci L. · Nat. Mater. · 2010 · 9 · 43010.1038/nmat2711 ↗
7. Song L. · Nano Lett. · 2010 · 10 · 320910.1021/nl1022139 ↗
8. Chen Y. · Appl. Phys. Lett. · 2004 · 84 · 243010.1063/1.1667278 ↗
9. Watanabe K. · Nat. Mater. · 2004 · 3 · 40410.1038/nmat1134 ↗
10. Castro Neto A. H. · Rev. Mod. Phys. · 2009 · 81 · 10910.1103/RevModPhys.81.109 ↗
11. Dean C. R. · Nat. Nanotechnol. · 2010 · 5 · 72210.1038/nnano.2010.172 ↗
12. Lee K. H. · Nano Lett. · 2012 · 12 · 71410.1021/nl203635v ↗
13. Britnell L. · Science · 2012 · 335 · 94710.1126/science.1218461 ↗
14. Britnell L. · Nano Lett. · 2012 · 12 · 170710.1021/nl3002205 ↗
15. Novoselov K. S. · Proc. Natl. Acad. Sci. U.S.A. · 2005 · 102 · 1045110.1073/pnas.0502848102 ↗
16. Pacilé D. · Appl. Phys. Lett. · 2008 · 92
17. Gorbachev R. V. · Small · 2011 · 7 · 46510.1002/smll.201001628 ↗
18. Coleman J. N. · Science · 2011 · 331 · 56810.1126/science.1194975 ↗
19. Shi Y. · Nano Lett. · 2010 · 10 · 413410.1021/nl1023707 ↗
20. Corso M. · Science · 2004 · 303 · 21710.1126/science.1091979 ↗
21. Sutter P. · ACS Nano · 2011 · 5 · 730310.1021/nn202141k ↗
22. Nagashima A. · Phys. Rev. B · 1995 · 51 · 460610.1103/PhysRevB.51.4606 ↗
23. Auwarter W. · Chem. Mater. · 2004 · 16 · 34310.1021/cm034805s ↗
24. Kim K. K. · Nano Lett. · 2012 · 12 · 16110.1021/nl203249a ↗
25. Joshi S. · Nano Lett. · 2012 · 12 · 582110.1021/nl303170m ↗
26. Preobrajenski A. B. · Phys. Rev. B · 2007 · 75
27. Ismach A. · ACS Nano · 2012 · 6 · 637810.1021/nn301940k ↗
28. Gao L. · Nat. Commun. · 2012 · 3 · 69910.1038/ncomms1702 ↗
29. Guo N. · Nanotechnology · 2012 · 23
30. Laskowski R. · Phys. Rev. B · 2010 · 81
31. Vlassiouk I. · ACS Nano · 2011 · 5 · 606910.1021/nn201978y ↗
32. Yuzuriha T. H. · Thin Solid Films · 1986 · 140 · 19910.1016/0040-6090(86)90263-4 ↗
33. Blase X. · Phys. Rev. B · 1995 · 51 · 686810.1103/PhysRevB.51.6868 ↗
34. Hoffman D. M. · Phys. Rev. B · 1984 · 30 · 605110.1103/PhysRevB.30.6051 ↗
35. Pimpinelli A. · 1998
36. Kong D. · Nano Lett. · 2010 · 10 · 224510.1021/nl101260j ↗
37. Shi Y. M. · Nano Lett. · 2012 · 12 · 278410.1021/nl204562j ↗
38. Li Q. · Nano Lett. · 2013 · 13 · 48610.1021/nl303879k ↗