Standards for the Characterization of Endurance in Resistive Switching Devices
Source abstract
Abstract
Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic vision sensors, and artificial neural networks. The main factor hindering the massive employment of RS devices in commercial circuits is related to variability and reliability issues, which are usually evaluated through switching endurance tests. However, we note that most studies that claimed high endurances >106 cycles were based on resistance versus cycle plots that contain very few data points (in many cases even <20), and which are collected in only one device. We recommend not to use such a characterization method because it is highly inaccurate and unreliable (i.e., it cannot reliably demonstrate that the device effectively switches in every cycle and it ignores cycle-to-cycle and device-to-device variability). This has created a blurry vision of the real performance of RS devices and in many cases has exaggerated their potential. This article proposes and describes a method for the correct characterization of switching endurance in RS devices; this method aims to construct endurance plots showing one data point per cycle and resistive state and combine data from multiple devices. Adopting this recommended method should result in more reliable literature in the field of RS technologies, which should accelerate their integration in commercial products.
Source: europepmc · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
Peter-Grünberg-Institut (PGI-7), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
Peter-Grünberg-Institut (PGI-10), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
Institut für Werkstoffe der Elektrotechnik 2 (IWE2), RWTH Aachen University, Aachen 52074, Germany
Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano and IU.NET, Piazza L. da Vinci 32, Milano, 20133, Italy
Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
Imec, Kapeldreef 75, 3001 Leuven, Belgium
Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, Barcelona 08193, Spain
Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom
CNR-IMM, Unit of Agrate Brianza, Via C. Olivetti 2, Agrate Brianza (MB) 20864, Italy
Applied Materials Inc., Via Ruini, Reggio Emilia 74L 42122, Italy
School of Materials Science and Engineering, Jiangsu Key Laboratory of Advanced Metallic Materials, Southeast University, Nanjing 211189, China
Institut de Microelectrònica de Barcelona-Centre Nacional de Microelectrònica, Consejo Superior de Investigaciones Científicas, Bellaterra 08193, Spain
Unidad de Investigación y Desarrollo de las Ingenierías-CONICET, Facultad Regional Buenos Aires, Universidad Tecnológica Nacional (UIDI-CONICET/FRBA-UTN), Buenos Aires, Medrano 951(C1179AAQ), Argentina
Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Avd. Fuentenueva s/n, Granada 18071, Spain
Dipartimento di Ingegneria “Enzo Ferrari”, Università di Modena e Reggio Emilia, Via P. Vivarelli 10/1, Modena 41125, Italy
Department of Electronics Engineering and Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
Centre for Electronics Frontiers, University of Southampton, Southampton SO171BJ, United Kingdom
Key Laboratory of Microelectronic Devices and Circuits (MOE), Department of Micro/nanoelectronics, Peking University, Beijing 100871, China
Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong
Engineering Product Development, Singapore University of Technology and Design (SUTD), 8 Somapah Road, 487372 Singapore
Department of Electronics, University of Valladolid, Paseo de Belén 15, Valladolid E-47011, Spain
Institute of Functional Nano and Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University 199 Ren-Ai Road, Suzhou 215123, China
Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, Massachusetts 01003-9292, United States
Funding
King Abdullah University of Science and Technology
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