journal article·2023-07-11Open access

Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems

Min-Kyu Song, Ji-Hoon Kang, Xinyuan Zhang, Wonjae Ji, Alon Ascoli, Ioannis Messaris, Ahmet Samil Demirkol, Bowei Dong, Samarth Aggarwal, Weier Wan, Seok-Man Hong, Suma George Cardwell, Irem Boybat, Jae-sun Seo, Jang-Sik Lee, Mario Lanza, Hanwool Yeon, Murat Onen, Ju Li, Bilge Yildiz, Jesús A. del Alamo, Seyoung Kim, Shinhyun Choi, Gianluca Milano, Carlo Ricciardi, Lambert Alff, Yang Chai, Zhongrui Wang, Harish Bhaskaran, Mark C. Hersam, Dmitri Strukov, H.-S. Philip Wong, Ilia Valov, Bin Gao, Huaqiang Wu, Ronald Tetzlaff, Abu Sebastian, Wei Lu, Leon Chua, J. Joshua Yang, Jeehwan Kim

ACS Nano· Volume 17· Issue 13

Abstract

Memristive technology has been rapidly emerging as a potential alternative to traditional CMOS technology, which is facing fundamental limitations in its development. Since oxide-based resistive switches were demonstrated as memristors in 2008, memristive devices have garnered significant attention due to their biomimetic memory properties, which promise to significantly improve power consumption in computing applications. Here, we provide a comprehensive overview of recent advances in memristive technology, including memristive devices, theory, algorithms, architectures, and systems. In addition, we discuss research directions for various applications of memristive technology including hardware accelerators for artificial intelligence, in-sensor computing, and probabilistic computing. Finally, we provide a forward-looking perspective on the future of memristive technology, outlining the challenges and opportunities for further research and innovation in this field. By providing an up-to-date overview of the state-of-the-art in memristive technology, this review aims to inform and inspire further research in this field.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advanced Memory and Neural Computing · Neural dynamics and brain function · Ferroelectric and Negative Capacitance Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States

Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States

Department of Materials Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States

Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea

Chair of Fundamentals of Electrical Engineering, Institute of Principles of Electrical and Electronic Engineering, Faculty of Electrical and Computer Engineering, School of Engineering Sciences, Technische Universität Dresden, Dresden 01069, Germany

Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom

Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States

The School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea

Sandia National Laboratories, Albuquerque, New Mexico 87123, United States

IBM Research Europe, 8803 Rüschlikon, Switzerland

School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85281, United States

Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia

School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea

Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States

Department of Nuclear Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States

Advanced Materials Metrology and Life Sciences Division, Istituto Nazionale di Ricerca Metrologica (INRiM), Strada delle Cacce, Torino 10135, Italy

Department of Applied Science and Technology, Politecnico di Torino, c.so Duca degli Abruzzi, Torino 10129, Italy

Advanced Thin Film Technology Division, Institute of Materials Science, Technische Universität Darmstadt, Darmstadt 64287, Germany

Department of Applied Physics, Hong Kong Polytechnic University, Hong Kong 999077, China

Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, China

Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States

Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States

Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States

Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, United States

Research Centre Juelich, PGI-7, Wilhelm-Johnen-Str., Juelich 52425, Germany

Funding

Samsung Science and Technology Foundation · Semiconductor Research Corporation · Office of Science · National Natural Science Foundation of China · Electronic Components and Systems for European Leadership · Division of Materials Research · Research Grants Council, University Grants Committee · European Metrology Programme for Innovation and Research · HORIZON EUROPE European Innovation Council · National Research Foundation of Korea · Deutsche Forschungsgemeinschaft · H2020 Future and Emerging Technologies · H2020 LEIT Biotechnology · MIT-IBM Watson AI Lab

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