Etching of Graphene Devices with a Helium Ion Beam
Source abstract
Abstract
We report on the etching of graphene devices with a helium ion beam, including in situ electrical measurement during lithography. The etching process can be used to nanostructure and electrically isolate different regions in a graphene device, as demonstrated by etching a channel in a suspended graphene device with etched gaps down to about 10 nm. Graphene devices on silicon dioxide (SiO(2)) substrates etch with lower He ion doses and are found to have a residual conductivity after etching, which we attribute to contamination by hydrocarbons.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Graphene research and applications · Nanopore and Nanochannel Transport Studies · Carbon Nanotubes in Composites
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics
School of Engineering and Applied Sciences, and
Center for Nanoscale Systems, Harvard University, Cambridge Massachusetts 02138
Carl Zeiss SMT, Inc., Peabody, Massachusetts 01960
Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
References (19)
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