Raman 2D-Band Splitting in Graphene: Theory and Experiment
Source abstract
Abstract
We present a systematic experimental and theoretical study of the two-phonon (2D) Raman scattering in graphene under uniaxial tension. The external perturbation unveils that the 2D mode excited with 785 nm has a complex line-shape mainly due to the contribution of two distinct double resonance scattering processes (inner and outer) in the Raman signal. The splitting depends on the direction of the applied strain and the polarization of the incident light. The results give new insight into the nature of the 2D band and have significant implications for the use of graphene as reinforcement in composites since the 2D mode is crucial to assess how effectively graphene uptakes an applied stress or strain.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Graphene research and applications · 2D Materials and Applications · Thermal properties of materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Chemical Engineering and High Temperature Chemical Processes, Foundation of Research and Technology-Hellas (FORTH/ICE-HT), 265 04 Patras, Greece
J. Heyrovsky Institute of Physical Chemistry, v.v.i., Academy of Sciences of the Czech Republic, 182 23 Prague 8, Czech Republic
Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin, Germany
School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, U.K.
Materials Science Department, University of Patras, 265 04 Patras, Greece
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