Direct Low-Temperature Nanographene CVD Synthesis over a Dielectric Insulator
Source abstract
Abstract
Graphene ranks highly as a possible material for future high-speed and flexible electronics. Current fabrication routes, which rely on metal substrates, require post-synthesis transfer of the graphene onto a Si wafer, or in the case of epitaxial growth on SiC, temperatures above 1000 degrees C are required. Both the handling difficulty and high temperatures are not best suited to present day silicon technology. We report a facile chemical vapor deposition approach in which nanographene and few-layer nanographene are directly formed over magnesium oxide and can be achieved at temperatures as low as 325 degrees C.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Graphene research and applications · Graphene and Nanomaterials Applications · Advancements in Battery Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
IFW Dresden, P.O. Box 270116, 01171 Dresden, Germany
Department of Physics, Technische Universität Dresden, 01062 Dresden, Germany
Institute for Materials Science and Max Bergmann Center of Biomaterials, Dresden University of Technology, 01062 Dresden, Germany
Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
Department of Material Science, National University of Tainan, 33, Sec. 2, Shu-Lin Street, Tainan, Taiwan 700, Republic of China
References (19)
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