journal article·2013-10-22

Restacking-Inhibited 3D Reduced Graphene Oxide for High Performance Supercapacitor Electrodes

Ji Hoon Lee, Nokyoung Park, Byung Gon Kim, Dae Soo Jung, Kyuhyun Im, Jaehyun Hur, Jang Wook Choi

ACS Nano· Volume 7· Issue 10
Publisher page

Abstract

Graphene has received considerable attention in both scientific and technological areas due to its extraordinary material properties originating from the atomically single- or small number-layered structure. Nevertheless, in most scalable solution-based syntheses, graphene suffers from severe restacking between individual sheets and thus loses its material identity and advantages. In the present study, we have noticed the intercalated water molecules in the dried graphene oxide (GO) as a critical mediator to such restacking and thus eliminated the hydrogen bonding involving the intercalated water by treating GO with melamine resin (MR) monomers. Upon addition of MR monomers, porous restacking-inhibited GO sheets precipitated, leading to the carbonaceous composite with an exceptionally large surface area of 1040 m(2)/g after a thermal treatment. Utilizing such high surface area, the final graphene composite exhibited excellent electrochemical performance as a supercapacitor electrode material: specific capacitance of 210 F/g, almost no capacitance loss for 20,000 cycles, and ~7 s rate capability. The current study delivers a message that various condensation reactions engaging GO sheets can be a general synthetic approach for restacking-inhibited graphene in scalable solution processes.
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Research context

OpenAlex topics: Supercapacitor Materials and Fabrication · Graphene research and applications · Advancements in Battery Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Graduate School of EEWS (WCU), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong Gu, Daejeon 305-701, Republic of Korea

Frontier Research Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics, Yongin, Kyunggi-do 446-712, Republic of Korea

KAIST Institute Nano Century, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong Gu, Daejeon, 305-701, Republic of Korea

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