Dynamic Behavior of the Triboelectric Charges and Structural Optimization of the Friction Layer for a Triboelectric Nanogenerator
Source abstract
Abstract
Seeking to increase the triboelectric charge density on a friction layer is one of the most basic approaches to improve the output performance of triboelectric nanogenerators (TENGs). Here, we studied the storage mechanism of triboelectric charge in the friction layer and discussed the function of carrier mobility and concentration in the charge-storing process. As guided by these results, a kind of composite structure is constructed in the friction layer to adjust the depth distribution of the triboelectric charges and improve the output performance of TENGs. To further elucidate this theory, a simple TENG, whose negative friction layer is a composite structure by integrating polystyrene (PS) and carbon nanotubes (CNTs) into polyvinylidene fluoride (PVDF), was fabricated, and its performance test was also carried out. Comparing with a pure PVDF friction layer, the composite friction layer can raise the triboelectric charge density by a factor of 11.2. The extended residence time of electrons in the friction layer is attributed to a large sum of electron trap levels from PS.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Sensor and Energy Harvesting Materials · Conducting polymers and applications · Supercapacitor Materials and Fabrication
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Nanoscience and Nanotechnology, Lanzhou University, Lanzhou 730000, China
School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
Funding
Ministry of Education of the People's Republic of China · National Natural Science Foundation of China
References (27)
Show source-provided references
1. 10.1016/j.nanoen.2012.01.00410.1016/j.nanoen.2012.01.004 ↗
2. 10.1016/j.jpowsour.2014.09.14610.1016/j.jpowsour.2014.09.146 ↗
3. 10.1021/nl301490q10.1021/nl301490q ↗
4. 10.1002/adma.20130565910.1002/adma.201305659 ↗
5. 10.1002/aenm.20130162410.1002/aenm.201301624 ↗
6. 10.1039/C4EE02435D10.1039/C4EE02435D ↗
7. 10.1002/adfm.20130348410.1002/adfm.201303484 ↗
8. 10.1002/adma.20140056210.1002/adma.201400562 ↗
9. 10.1038/ncomms263910.1038/ncomms2639 ↗
10. 10.1021/nn404659d10.1021/nn404659d ↗
11. 10.1021/acsnano.5b0075910.1021/acsnano.5b00759 ↗
12. 10.1002/adma.20150012110.1002/adma.201500121 ↗
13. 10.1088/0960-1317/21/10/10400510.1088/0960-1317/21/10/104005 ↗
14. 10.1088/0960-1317/17/7/00710.1088/0960-1317/17/7/007 ↗
15. 10.1109/JMEMS.2004.83015110.1109/JMEMS.2004.830151 ↗
16. 10.1002/adfm.20150133110.1002/adfm.201501331 ↗
17. 10.1021/nn506673x10.1021/nn506673x ↗
18. 10.1002/adma.20150012110.1002/adma.201500121 ↗
19. 10.1021/acsnano.5b0499510.1021/acsnano.5b04995 ↗
20. 10.1021/acsnano.5b0448610.1021/acsnano.5b04486 ↗
21. 10.1021/acsnano.5b0439610.1021/acsnano.5b04396 ↗
22. 10.1016/j.nanoen.2015.04.00810.1016/j.nanoen.2015.04.008 ↗
23. 10.1021/am507168810.1021/am5071688 ↗
24. 10.1039/C5NR05514H10.1039/C5NR05514H ↗
25. 10.1021/nl503402c10.1021/nl503402c ↗
26. 10.1002/adfm.20140193610.1002/adfm.201401936 ↗
27. 10.1039/c4nr01934b10.1039/c4nr01934b ↗