Deep Ultraviolet to Near-Infrared Emission and Photoresponse in Layered N-Doped Graphene Quantum Dots
Source abstract
Abstract
Material that can emit broad spectral wavelengths covering deep ultraviolet, visible, and near-infrared is highly desirable. It can lead to important applications such as broadband modulators, photodetectors, solar cells, bioimaging, and fiber communications. However, there is currently no material that meets such desirable requirement. Here, we report the layered structure of nitrogen-doped graphene quantum dots (N-GQDs) which possess broadband emission ranging from 300 to >1000 nm. The broadband emission is attributed to the layered structure of the N-GQDs that contains a large conjugated system and provides extensive delocalized π electrons. In addition, a broadband photodetector with responsivity as high as 325 V/W is demonstrated by coating N-GQDs onto interdigital gold electrodes. The unusual negative photocurrent is observed which is attributed to the trapping sites induced by the self-passivated surface states in the N-GQDs.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Carbon and Quantum Dots Applications · Luminescence and Fluorescent Materials · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong SAR
Kunming Institute of Physics, Kunming 650223, Yunnan Province, China
Solar Energy Research Institute, Yunnan Normal University, Kunming 650092, China
Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409, United States
Multidisciplinary Nanotechnology Center, College of Engineering, Swansea University, Singleton Park, Swansea SA2 8PP, United Kingdom
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