Modeling High-Efficiency Quantum Dot Sensitized Solar Cells

With energy conversion efficiencies in continuous growth, quantum dot sensitized solar cells (QDSCs) are currently under an increasing interest, but there is an absence of a complete model for these devices. Here, we compile the latest developments in this kind of cells in order to attain high efficiency QDSCs, modeling the performance. CdSe QDs have been grown directly on a TiO(2) surface by successive ionic layer adsorption and reaction to ensure high QD loading. ZnS coating and previous growth of CdS were analyzed. Polysulfide electrolyte and Cu(2)S counterelectrodes were used to provide higher photocurrents and fill factors, FF. Incident photon-to-current efficiency peaks as high as 82%, under full 1 sun illumination, were obtained, which practically overcomes the photocurrent limitation commonly observed in QDSCs. High power conversion efficiency of up to 3.84% under full 1 sun illumination (V(oc) = 0.538 V, j(sc) = 13.9 mA/cm(2), FF = 0.51) and the characterization and modeling carried out indicate that recombination has to be overcome for further improvement of QDSC.