journal article·2025-03-03

Synthesis of Fe3Se4 Nanoplates with Room-Temperature Ferrimagnetism

Hongmei Zhang, Yani Jiang, Chen Yi, Bailing Li, Ziwei Huang, Di Wang, Kun He, Jingmei Tang, Biao Zhang, Zucheng Zhang, Shanhao Li, Liqiang Zhang, Dingyi Shen, Miaomiao Liu, Muhammad Zeeshan Saeed, Bo Li, Xidong Duan

ACS Materials Letters· Volume 7· Issue 3
Publisher page

Abstract

Fe-based two-dimensional (2D) materials have attracted considerable attention as an optimal platform for exploring magnetism, superconductivity, and phase transitions. In this study, we successfully fabricated Fe 3 Se 4 nanoplates on WSe 2 nanosheets via a chemical vapor deposition approach. Optical microscopy images disclose that Fe 3 Se 4 nanoplates either display single domains or achieve complete coverage on the WSe 2 nanosheets. Magneto-transport measurements exhibit a captivating crossover of magnetoresistance (MR) with feeble hysteresis around 120 K, where positive and negative MR values are respectively witnessed below and above this temperature. This phenomenon is ascribed to the alterations in the dominant spin characteristics. Another salient feature is the intersection of hysteresis branches observed in the anomalous Hall effect measurements. Moreover, both the magneto-transport and vibrating sample magnetometer outcomes suggest that Fe 3 Se 4 nanoplates possess magnetic properties near room temperature. These findings imply that Fe 3 Se 4 nanoplates are prospective candidates for the development of energy-efficient logic devices.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering

Hunan University

Hunan Key Laboratory of Two-Dimensional Materials, College of Physics and Electronics

School of Advanced Materials

Peking University Shenzhen Graduate School

School of Materials Science and Engineering and Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology

Peking University

Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits)

Funding

National Key Research and Development Program of China · National Natural Science Foundation of China · Key Research and Development Program of Hunan Province of China

References (52)

Show source-provided references
1. 10.1038/s44160-022-00165-710.1038/s44160-022-00165-7 ↗
2. 10.1038/s41563-022-01291-510.1038/s41563-022-01291-5 ↗
3. 10.1103/PhysRevLett.130.12690110.1103/PhysRevLett.130.126901 ↗
4. 10.1002/adma.20210831310.1002/adma.202108313 ↗
5. 10.1002/adfm.20190004010.1002/adfm.201900040 ↗
6. 10.1038/s41928-022-00754-610.1038/s41928-022-00754-6 ↗
7. 10.1002/smll.20210161610.1002/smll.202101616 ↗
8. 10.1002/smll.20210574410.1002/smll.202105744 ↗
9. 10.1038/s41467-022-33017-110.1038/s41467-022-33017-1 ↗
10. 10.1016/j.mattod.2022.04.01110.1016/j.mattod.2022.04.011 ↗
11. 10.1002/adma.20220011710.1002/adma.202200117 ↗
12. 10.1007/s12274-021-3633-310.1007/s12274-021-3633-3 ↗
13. 10.1038/s41928-022-00879-810.1038/s41928-022-00879-8 ↗
14. 10.1002/adma.20221075510.1002/adma.202210755 ↗
15. 10.1038/s41467-021-21072-z10.1038/s41467-021-21072-z ↗
16. 10.1038/s41467-023-39004-410.1038/s41467-023-39004-4 ↗
17. 10.1016/j.nantod.2023.10179410.1016/j.nantod.2023.101794 ↗
18. 10.1038/s41586-018-0631-z10.1038/s41586-018-0631-z ↗
19. 10.1016/j.matt.2021.11.02910.1016/j.matt.2021.11.029 ↗
20. 10.1002/adma.20221138810.1002/adma.202211388 ↗
21. 10.1007/s12274-020-3021-410.1007/s12274-020-3021-4 ↗
22. 10.1038/s41467-022-32605-510.1038/s41467-022-32605-5 ↗
23. 10.1093/nsr/nwac17310.1093/nsr/nwac173 ↗
24. 10.1063/1.488735610.1063/1.4887356 ↗
25. 10.1007/BF0091096310.1007/BF00910963 ↗
26. 10.1002/adma.20200845610.1002/adma.202008456 ↗
27. 10.1021/acs.nanolett.1c0440310.1021/acs.nanolett.1c04403 ↗
28. 10.1002/adma.20220727610.1002/adma.202207276 ↗
29. 10.1088/1361-648X/aba3ef10.1088/1361-648X/aba3ef ↗
30. 10.1063/1.354450810.1063/1.3544508 ↗
31. 10.1002/adma.20180158310.1002/adma.201801583 ↗
32. 10.1016/j.mattod.2020.11.02210.1016/j.mattod.2020.11.022 ↗
33. 10.1038/s41467-019-11075-210.1038/s41467-019-11075-2 ↗
34. 10.1126/science.aan681410.1126/science.aan6814 ↗
35. 10.1002/adma.20240836710.1002/adma.202408367 ↗
36. 10.1021/acsnano.8b0867710.1021/acsnano.8b08677 ↗
37. 10.1038/s41467-022-32582-910.1038/s41467-022-32582-9 ↗
38. 10.1021/accountsmr.2c0009610.1021/accountsmr.2c00096 ↗
39. 10.1126/science.aac943910.1126/science.aac9439 ↗
40. 10.1002/adma.20190589610.1002/adma.201905896 ↗
41. 10.1016/j.scib.2022.06.02210.1016/j.scib.2022.06.022 ↗
42. 10.1103/PhysRevLett.110.06660110.1103/PhysRevLett.110.066601 ↗
43. 10.1063/1.504468610.1063/1.5044686 ↗
44. 10.1016/j.jmmm.2023.17145410.1016/j.jmmm.2023.171454 ↗
45. 10.1038/s41598-020-72233-x10.1038/s41598-020-72233-x ↗
46. 10.1063/1.242503510.1063/1.2425035 ↗
47. 10.1103/PhysRevB.94.14010110.1103/PhysRevB.94.140101 ↗
48. 10.1016/j.jmmm.2018.05.01810.1016/j.jmmm.2018.05.018 ↗
49. 10.1103/PhysRevLett.121.09680210.1103/PhysRevLett.121.096802 ↗
50. 10.1103/PhysRevB.75.10440110.1103/PhysRevB.75.104401 ↗
51. 10.1109/TMAG.2006.88038210.1109/TMAG.2006.880382 ↗
52. 10.1103/PhysRevLett.98.15720510.1103/PhysRevLett.98.157205 ↗