A High Switching Ratio Ti ₃ C ₂ :V ₂ O ₅ -Based Memristor for Artificial Synapse and Simulation of Human Body Water Dynamics

Memristors that can be used to simulate biosynaptic functions offer great potential for energy-efficient neuromorphic computing. Ti 3 C 2 exhibits excellent electrical conductivity and has been investigated for its application in memristor-based artificial synapse. However, despite the crucial importance of a high switching ratio for minimizing data read/write errors, current research on Ti 3 C 2 -based memristors with high switching ratios remains limited in memristor-based neuromorphic computing systems. Here, we synthesized a Ti 3 C 2:V 2 O 5 nanocomposite by introducing V 2 O 5 nanowires into a Ti 3 C 2 matrix and fabricated a vertical memristor based on this composite, which exhibits excellent resistive switching characteristics including a high switching ratio of 10 6 and an average set power as low as 127 nW. The memristor effectively simulated various biological synaptic functions, the light and dark adaptation behavior of the human retina and the changes in human body water content at different temperatures, providing insights for applications in the field of neuromorphic computing.