journal article·2025-02-03

Thermodynamics of MgO Atomic Layer Deposition Surface Reactions

Ashley R. Bielinski, Jiayi Xu, Swan Yee Htun, Stephan O. Hruszkewycz, Cong Liu, Alex B.F. Martinson

ACS Materials Letters· Volume 7· Issue 2
Publisher page

Abstract

The realities of atomic layer deposition (ALD) surface reactions often deviate from the simple ligand exchange frequently used to illustrate the technique. A detailed understanding of these reactions is necessary to develop greater surface synthetic control including chemical selectivity for patterning or to target defects. The thermodynamics of surface reactions relevant to MgO ALD were investigated using pyroelectric calorimetry to measure the time-resolved heat generation. These reactions show exothermic heat generation of 0.12 mJ/cm 2 and 0.15 mJ/cm 2 for alternating Mg(CpEt) 2 and H 2 O reactions, respectively. The total reaction heat closely matches the standard reaction enthalpy for bulk MgO, supplemented with first-principles molecular calculations. First-principles models further reveal that while simple ligand exchange is favorable during surface reactions, the required increase in Mg-coordination number from two in the precursor to six in bulk MgO requires additional coverage-dependent surface reactions, which depend on the availability and stability of proximal surface hydroxyls.
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Research context

OpenAlex topics: Semiconductor materials and devices · Electronic and Structural Properties of Oxides · ZnO doping and properties

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Affiliations

Materials Science Division

Argonne National Laboratory

Chemical Sciences and Engineering Division

Applied Physics, Northwestern University

Funding

Division of Materials Sciences and Engineering

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