DataVXACS Materials LettersPaper
journal article·2025-04-07

Overcoming Back Interfacial Barrier Improves Flexible Cu2ZnSn(S,Se)4 Solar Cell Efficiency via CuO Sacrificial Layers

Zhenyi Su, Weihao Xie, Quanzhen Sun, Yifan Li, Zhipan Zhong, Weihuang Wang, Caixia Zhang, Hui Deng, Shuying Cheng

ACS Materials Letters· Volume 7· Issue 4
Publisher page
Source abstract

Abstract

The optimization of the back interface is an important means of improving the power conversion efficiency (PCE) of Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells. Here, a CuO sacrificial layer is introduced into the Mo/CZTSSe back interface to improve device efficiency. The insertion of the CuO sacrificial layer inhibits the formation of Sn(S,Se) 2 secondary phases in the CZTSSe film. Meanwhile, the interfacial trap state ( N IT ) is reduced by about 22%. Furthermore, the 75 nm CuO sacrificial layer can reduce the thickness of the MoSe 2 layer, leading to a 33.18 meV reduction in the back interfacial barrier. This design enhances the back interfacial transport characteristics and suppresses defects. Finally, the flexible CZTSSe solar cell achieve the efficiency of 10.57%.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Micro-Nano Devices and Solar Cells, College of Physics and Information Engineering

Fuzhou University

Fujian Science &Technology Innovation Laboratory for Optoelectronic Information of China

Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering

Funding

Natural Science Foundation of Fujian Province · Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China · National Natural Science Foundation of China · Foundation of Fujian Provincial Department of Industry and Information Technology of China

References (38)

Show source-provided references
1. 10.1002/adma.20180669210.1002/adma.201806692 ↗
2. 10.1016/j.solmat.2019.03.00110.1016/j.solmat.2019.03.001 ↗
3. 10.1002/smll.20230780710.1002/smll.202307807 ↗
4. 10.1007/s40843-024-3055-x10.1007/s40843-024-3055-x ↗
5. 10.1002/aenm.20230170110.1002/aenm.202301701 ↗
6. 10.1002/aenm.20190040810.1002/aenm.201900408 ↗
7. 10.1002/aenm.20220304610.1002/aenm.202203046 ↗
8. 10.1038/s41467-021-23343-110.1038/s41467-021-23343-1 ↗
9. 10.1021/ja308862n10.1021/ja308862n ↗
10. 10.1016/j.solener.2017.03.08210.1016/j.solener.2017.03.082 ↗
11. 10.1002/adfm.20231012410.1002/adfm.202310124 ↗
12. 10.1002/adma.20240013810.1002/adma.202400138 ↗
13. 10.1088/0022-3727/48/3/03510310.1088/0022-3727/48/3/035103 ↗
14. 10.1038/am.2017.10310.1038/am.2017.103 ↗
15. 10.1039/C9TA13080B10.1039/C9TA13080B ↗
16. 10.1002/adfm.20221142110.1002/adfm.202211421 ↗
17. 10.1002/solr.20200029310.1002/solr.202000293 ↗
18. 10.1016/j.jechem.2023.10.03410.1016/j.jechem.2023.10.034 ↗
19. 10.1038/s41560-023-01251-610.1038/s41560-023-01251-6 ↗
20. 10.1002/aenm.20150160910.1002/aenm.201501609 ↗
21. 10.1039/D0EE03702H10.1039/D0EE03702H ↗
22. 10.1038/s41560-023-01251-610.1038/s41560-023-01251-6 ↗
23. 10.1038/s41560-022-01078-710.1038/s41560-022-01078-7 ↗
24. 10.1021/acs.nanolett.5b0451010.1021/acs.nanolett.5b04510 ↗
25. 10.1038/am.2017.10310.1038/am.2017.103 ↗
26. 10.7567/APEX.8.08230210.7567/APEX.8.082302 ↗
27. 10.1016/j.nanoen.2018.07.03910.1016/j.nanoen.2018.07.039 ↗
28. 10.1038/nature1147610.1038/nature11476 ↗
29. 10.1088/1674-1056/abb7fe10.1088/1674-1056/abb7fe ↗
30. 10.1002/adma.20220296910.1002/adma.202202969 ↗
31. 10.1002/advs.20230674010.1002/advs.202306740 ↗
32. 10.1038/srep1062610.1038/srep10626 ↗
33. 10.1002/adma.20160474410.1002/adma.201604744 ↗
34. 10.1002/adfm.20150532410.1002/adfm.201505324 ↗
35. 10.1021/acsami.0c2100810.1021/acsami.0c21008 ↗
36. 10.1002/smll.20220134710.1002/smll.202201347 ↗
37. 10.1063/1.349928410.1063/1.3499284 ↗
38. 10.1002/solr.20220103610.1002/solr.202201036 ↗