DataVXACS Materials LettersPaper
journal article·2021-02-01

Surface Charge Transfer Doping Enabled Large Hysteresis in van der Waals Heterostructures for Artificial Synapse

Xuan Pan, Yue Zheng, Yumeng Shi, Wei Chen

ACS Materials Letters· Volume 3· Issue 2
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Source abstract

Abstract

Exploitation of the I–V hysteresis property in a van der Waals heterostructure is significant to modulate its electronic properties and develop unique applications. In this work, we report a two-terminal MoS2 floating-gate (FG) artificial synaptic device, the surface of which was functionalized by an ultrathin deposition (0.1 nm) of MoO3 on the channel region. The surface functionalization together with the FG field effect greatly enhance hysteresis of the device, resulting in a significantly expanded memory window (from 6 to 14.8 V) and a remarkably increased ON/OFF current ratio (from 10 to 107). In addition, essential synaptic functions were successfully emulated in this synaptic two-terminal device, including transition from short-term to long-term potentiation, paired-pulse facilitation/depression, and spike timing-dependent plasticity. These findings promise surface charge transfer doping as an effective method to broaden the functionality of two-dimensional transition metal dichalcogenides-based electronic devices and provide a platform for the development of electric-modulated neuromorphic architectures.
Source: openalex_inverted_index · Quality: baseline

Research context

Materials processing

OpenAlex topics: Advanced Memory and Neural Computing · 2D Materials and Applications · Ferroelectric and Negative Capacitance Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China

Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore

Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, China

Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543, Singapore

National University of Singapore (Suzhou) Research Institute, 377 Lin Quan Street, Suzhou Industrial Park, Suzhou, Jiang Su 215123, China

Funding

Agency for Science, Technology and Research · Ministry of Education - Singapore · National Natural Science Foundation of China · Shenzhen Peacock Plan · Fundamental Research Foundation of Shenzhen

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