Room-Temperature Lateral Spin Valve in Graphene/Fe₃GaTe₂ van der Waals Heterostructures

The remarkable electronic properties of two-dimensional van der Waals (vdW) materials make them promising platforms for next-generation spintronic devices. In this study, we demonstrate the room-temperature graphene lateral spin valve devices in the Fe 3 GaTe 2 /graphene full vdW heterostructure. The spin transport channel is few-layer graphene, and room-temperature ferromagnet Fe 3 GaTe 2 is used as both the spin injector and detector. Pronounced nonlocal spin valve signals can be observed when the magnetic field sweeps along the out-of-plane easy axis direction of Fe 3 GaTe 2 . This nonlocal spin valve signal persists even at 320 K, realizing a room-temperature lateral spin valve in full vdW heterostructure. Additionally, a significant magnitude nonlocal spin valve signal can be detected even with the low bias current of 1 μA. Furthermore, the magnetic field angle-dependent nonlocal measurements revealed that the nonlocal spin valve behavior is closely related to the robust large perpendicular magnetic anisotropy property of Fe 3 GaTe 2 . The nonlocal spin valve signal is prominent when the magnetic field is applied near the perpendicular direction and disappears under the in-plane magnetic field. These results demonstrate the potential of Fe 3 GaTe 2 as a prospective candidate for constructing room-temperature, two-dimensional vdW spintronic devices.