Energy-Efficient Ultrafast van der Waals Floating-Gate Memory Utilizing Memristive Switching of hBN

Floating-gate memories based on two-dimensional materials have demonstrated remarkable advantages for in-memory computing, e.g., ultrafast speed. Nevertheless, their practical application is constrained by high operation voltages, which aggravate energy consumption. Herein, we propose a van der Waals device architecture that integrates a hexagonal boron nitride (hBN) memristor with a molybdenum disulfide floating-gate memory using the shared hBN as a tunneling layer, where the former serves as a control gate for the latter. This design takes full advantage of the rapid and low-voltage switching capability of the memristor and the nonvolatile nature of floating-gate structure, which leads to a breakthrough in memory performance including ultrafast operations of ∼100 ns at a remarkably low voltage of ∼1 V and ultralow power consumption of ∼250 fJ. Integrating the device with a fixed resistor successfully implements various logic-gate functions (NOT, NAND, and NOR). Our findings promise a facile and integrated memory platform for energy-efficient in-memory computing.