Tip preparation for usage in an ultra-low temperature UHV scanning tunneling microscope
Source abstract
Abstract
AbstractAbstractThis work deals with the preparation and characterization of tungsten tips for the use in UHV low-temperature scanning tunneling microscopy and spectroscopy (STM and STS, respectively). These specific environments require in situ facilities for tip conditioning, for further sharpening of the tips, as well as for reliable tip characterization. The implemented conditioning methods include direct resistive annealing, annealing by electron bombardment, and self-sputtering with noble gas ions. Moreover, results from in situ tip characterization by field emission and STM experiments were compared to ex situ scanning electron microscopy. Using the so-prepared tips, high resolution STM images and tunneling spectra were obtained in a temperature range from ambient down to 350 mK, partially with applied magnetic field, on a variety of materials.Key words: Scanning tunneling microscopy (STM)STM tip preparationAu(1 1 1)NbSe2Superconductor
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Research context
OpenAlex topics: Force Microscopy Techniques and Applications · Surface and Thin Film Phenomena · Advanced Electron Microscopy Techniques and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Max-Planck Institute for Chemical Physics of Solids, D-01187 Dresden, Germany
References (23)
Show source-provided references
1. J.P. Ibe, P.P. Bey Jr., S.L. Brandow, R.A. Brizzolara, N.A. Burnham, D.P. DiLella, K.P. Lee, C.R.K. Marrian, R.J. Colton, J. Vac. Sci. Technol. A 8 (1990) 3570.
2. Goodfellow Cambridge Ltd., Huntingdon, UK.
3. Omicron NanoTechnology GmbH, Taunusstein, Germany.
4. R.H. Fowler, L. Nordheim, Proc. Roy. Soc. A 119 (1928) 173.
5. L. Nordheim, Proc. Roy. Soc. A 121 (1928) 626.
6. A. Modinos, Field, Thermionic, and Secondary Electron Emission Spectroscopy, Plenum Press, New York, 1984.10.1007/978-1-4757-1448-7 ↗
7. L. Ottaviano, L. Lozzi, S. Santucci, Rev. Sci. Instrum. 74 (2003) 3368.10.1063/1.1581392 ↗
8. I. Ekvall, E. Wahlström, D. Claesson, H. Olin, E. Olsson, Meas. Sci. Technol. 10 (1999) 11.10.1088/0957-0233/10/1/006 ↗
9. V.T. Binh, J. Microscopy 152 (1988) 355.10.1111/j.1365-2818.1988.tb01396.x ↗
10. A.P. Jansen, J.P. Jones, J. Phys. D 4 (1970) 118.10.1088/0022-3727/4/1/316 ↗
11. O. Albrektsen, H.W.M. Salemink, K.A. Mørch, A.R. Thölen, J. Vac. Sci. Technol. B 12 (1994) 3187.10.1116/1.587497 ↗
12. G.J. de Raad, P. Koenraad, J.H. Wolter, J. Vac. Sci. Technol. B 17 (1999) 1946.10.1116/1.590854 ↗
13. C. Schiller, A.A. Koomans, T.L. van Rooy, C. Schönenberger, H.L. van Elswijk, Surf. Sci. 339 (1995) 925.
14. J.Y. Cavaille, M. Drechsler, Rev. Phys. Appl. 12 (1977) 1631.10.1051/rphysap:0197700120100163100 ↗
15. C.K. Shih, R.M. Feenstra, G. Chandrashekhar, Phys. Rev. B 43 (1991) 7913.10.1103/PhysRevB.43.7913 ↗
16. Ch. Renner, Ø. Fischer, Phys. Rev. B 51 (1995) 9208.10.1103/PhysRevB.51.9208 ↗
17. W. Haiss, D. Lackley, J.K. Sass, K.H. Besocke, J. Chem. Phys. 95 (1991) 2193.10.1063/1.460967 ↗
18. C. Wöll, S. Chiang, R.J. Wilson, P.H. Lippel, Phys. Rev. B 39 (1989) 7988.10.1103/PhysRevB.39.7988 ↗
19. J.V. Barth, H. Brune, G. Ertl, R. Brehm, Phys. Rev. B 42 (1990) 9307.10.1103/PhysRevB.42.9307 ↗
20. B. Giambattista, A. Johnson, R.V. Coleman, B. Drake, P.K. Hansma, Phys. Rev. B 37 (1988) 2741.10.1103/PhysRevB.37.2741 ↗
21. H.F. Hess, R.B. Robinson, R.C. Dynes, J.M. Valles Jr., J.V. Waszczak, Phys. Rev. Lett. 62 (1989) 214.10.1103/PhysRevLett.62.214 ↗
22. Ch. Renner, A.D. Kent, Ph. Niedermann, Ø. Fischer, F. Lévy, Phys. Rev. Lett. 67 (1991) 1650.10.1103/PhysRevLett.67.1650 ↗
23. S. Behler, S.H. Pan, M. Bernasconi, P. Jess, H.J. Hug, O. Fritz, H.J. Güntherodt, J. Vac. Sci. Technol. B 12 (1994) 2209.10.1116/1.587742 ↗