DataVXScience and Technology of Advanced MaterialsPaper
journal article·2013-03Open access

Determination of the surface band bending in InxGa1−xN films by hard x-ray photoemission spectroscopy

Mickael Lozac'h, Shigenori Ueda, Shitao Liu, Hideki Yoshikawa, Sang Liwen, Xinqiang Wang, Bo Shen, Kazuaki Sakoda, Keisuke Kobayashi, Masatomo Sumiya

Science and Technology of Advanced Materials· Volume 14· Issue 1
Publisher pageOpen full text
Source abstract

Abstract

Core-level and valence band spectra of InxGa1−xN films were measured using hard x-ray photoemission spectroscopy (HX-PES). Fine structure, caused by the coupling of the localized Ga 3d and In 4d with N 2s states, was experimentally observed in the films. Because of the large detection depth of HX-PES (∼20 nm), the spectra contain both surface and bulk information due to the surface band bending. The InxGa1−xN films (x = 0–0.21) exhibited upward surface band bending, and the valence band maximum was shifted to lower binding energy when the mole fraction of InN was increased. On the other hand, downward surface band bending was confirmed for an InN film with low carrier density despite its n-type conduction. Although the Fermi level (EF) near the surface of the InN film was detected inside the conduction band as reported previously, it can be concluded that EF in the bulk of the film must be located in the band gap below the conduction band minimum.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Electron and X-Ray Spectroscopy Techniques · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Photonic Materials Unit, National Institute for Materials Science, Tsukuba 305-0044, Japan

Doctoral Program in Materials Science and Engineering, Tsukuba University, Tsukuba 305-8573, Japan

Synchrotron X-ray Station at SPring-8, National Institute for Materials Science, Hyogo 679-5148, Japan

State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People's Republic of China

Wide Bandgap Material Group, National Institute for Materials Science, Tsukuba 305-0044, Japan

ICYS-MANA, National Institute for Materials Science, Tsukuba 305-0044, Japan

JST-ALCA, The Japan Science and Technology Agency, Tokyo 102-0076, Japan

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