journal article·2014-06Open access

Theoretical and experimental investigation of the excellent p–n control in yttrium aluminoborides

Ryoji Sahara, Takao Mori, Satofumi Maruyama, Yuzuru Miyazaki, Kei Hayashi, Tsuyoshi Kajitani

Abstract

[Formula: see text] with different occupancies of Al sites [Formula: see text]. Such control of the occupancy of metal sites in borides is unusual. Calculations based on detailed x-ray diffraction data reveal a stable configuration of the atomic sites, indicating that such variation in occupancy is possible. A shift from positive through zero to negative values of the Seebeck coefficient is also clearly illustrated by determining the density of states for different configurations.
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Research context

OpenAlex topics: Rare-earth and actinide compounds · Boron and Carbon Nanomaterials Research · Metal and Thin Film Mechanics

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References (40)

Show source-provided references
1. 10.1007/978-3-642-37537-810.1007/978-3-642-37537-8 ↗
2. 10.1201/b1189210.1201/b11892 ↗
3. MoriT 2008 Higher borides Handbook on the Physics and Chemistry of Rare-Earths vol 38 GschneidnerK A Jr BunzliJ-CPecharskyV Amsterdam North-Holland 10510.1016/S0168-1273(07)38003-3 ↗
4. 10.1103/PhysRevB.4.59210.1103/PhysRevB.4.592 ↗
5. 10.1103/PhysRevA.40.325410.1103/PhysRevA.40.3254 ↗
6. 10.1016/j.physb.2006.03.07210.1016/j.physb.2006.03.072 ↗
7. 10.1063/1.278501710.1063/1.2785017 ↗
8. MoriT 2012 Modules, Systems, and Applications in Thermoelectrics RoweD M London CRC Press/Taylor and Francis 14
9. 10.1103/PhysRevB.29.458210.1103/PhysRevB.29.4582 ↗
10. 10.1103/PhysRevLett.81.231610.1103/PhysRevLett.81.2316 ↗
11. 10.1016/0022-4596(88)90192-210.1016/0022-4596(88)90192-2 ↗
12. 10.1016/S0925-8388(97)00414-310.1016/S0925-8388(97)00414-3 ↗
13. 10.1016/S0025-5408(01)00803-010.1016/S0025-5408(01)00803-0 ↗
14. 10.2320/matertrans.E-MRA200789010.2320/matertrans.E-MRA2007890 ↗
15. 10.1016/j.jssc.2006.03.03010.1016/j.jssc.2006.03.030 ↗
16. 10.1063/1.273057110.1063/1.2730571 ↗
17. 10.1557/JMR.2010.010010.1557/JMR.2010.0100 ↗
18. 10.1016/j.materresbull.2013.01.04310.1016/j.materresbull.2013.01.043 ↗
19. 10.1039/b916028k10.1039/b916028k ↗
20. 10.1016/j.scriptamat.2012.10.04410.1016/j.scriptamat.2012.10.044 ↗
21. 10.1063/1.474879210.1063/1.4748792 ↗
22. 10.1103/PhysRevB.76.16540510.1103/PhysRevB.76.165405 ↗
23. 10.1002/pssa.221114012610.1002/pssa.2211140126 ↗
24. 10.1016/0925-8388(92)90518-E10.1016/0925-8388(92)90518-E ↗
25. 10.4028/www.scientific.net/SSP.13010.4028/www.scientific.net/SSP.130 ↗
26. 10.1103/PhysRevB.50.1795310.1103/PhysRevB.50.17953 ↗
27. 10.1103/PhysRevB.59.175810.1103/PhysRevB.59.1758 ↗
28. 10.1103/PhysRevB.54.1116910.1103/PhysRevB.54.11169 ↗
29. 10.1103/PhysRevB.45.1324410.1103/PhysRevB.45.13244 ↗
30. 10.1006/jssc.1997.732810.1006/jssc.1997.7328 ↗
31. 10.1088/0953-8984/13/20/10510.1088/0953-8984/13/20/105 ↗
32. 10.1002/pssa.221101020210.1002/pssa.2211010202 ↗
33. 10.1063/1.486913110.1063/1.4869131 ↗
34. 10.1016/j.jssc.2006.01.06410.1016/j.jssc.2006.01.064 ↗
35. 10.1063/1.185036510.1063/1.1850365 ↗
36. 10.1088/1742-6596/176/1/01201810.1088/1742-6596/176/1/012018 ↗
37. 10.1039/c1ee02784k10.1039/c1ee02784k ↗
38. 10.1088/0957-4484/24/32/32570210.1088/0957-4484/24/32/325702 ↗
39. UherC 2000 Semiconductors and Semimetals 69 TrittT M New York Academic 139
40. 10.1146/annurev.matsci.29.1.8910.1146/annurev.matsci.29.1.89 ↗