Chemical-reaction dependence of plasma parameter in reactive silane plasma

Electron temperature in a silane glow-discharge plasma, being an important plasma parameter for determining photo-induced instability in the resulting hydrogenated amorphous silicon (a-Si:H), has been studied under various film-preparation conditions. We have used an optical-emission-intensity ratio of Si* to SiH* (Isi*/IsiH*) which corresponds to the high-energy-tail slope of the electron-energy-distribution function in the plasma as a measure of electron temperature in a reactive silane glow-discharge plasma. We have found quite differently from the conventional non-reactive glow-discharge plasma such as hydrogen plasma that the electron temperature in the silane plasma is strongly modified by the substrate temperature (gas temperature) especially under high silane-gas partial-pressure condition. This anomalous behavior of the electron temperature in the silane plasma has been explained by means of gas-phase-polymerization reaction and electron-attachment process to the polymers in the plasma. The electron temperature has been remarkably reduced when a hydrogen-dilution method and a cathode-heating method are used which are considered to control polymer-formation reactions in the silane plasma together with utilization of conventional electron-temperature-controlling methods such as a very high plasma-excitation frequency and an application of magnetic field for electron-confinement. As a consequence of the reduction of electron temperature in the silane plasma, highly stabilized a-Si:H has been successfully obtained even under high growth rate conditions of 1.5 nm s-1.