Optical processes of red emission from Eu doped GaN
Source abstract
Abstract
A single crystalline Eu-doped GaN was grown by gas-source molecular beam epitaxy and photoluminescence (PL) properties were studied. The PL spectra show red-emission at 622 nm originating from intra 4f–4f transition of Eu3+ ion without band-edge emission of GaN. The peak shift of the red-emission with the temperature variation from 77 K to room temperature is less than 1.6 meV, and thermal quenching of the luminescence was found to be small compared with the band-to-band transition. Fourier transform infrared spectra showed an absorption peak at about 0.37 eV, which may be due to a deep defect level. The intensity of the red luminescence and the defect-related absorption peak increased with increasing Eu concentration, and a close correlation in the intensity was observed between them. These results suggest that the deep defect level plays an important role in the radiative transition of Eu3+ ion in GaN and the optical process for the luminescence at 622 nm was discussed with the relation to the defect.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki, 305-8573, Japan
References (30)
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