Controlled growth of silicon nanowires synthesized via solid–liquid–solid mechanism

The growth of silicon nanowires using solid—liquid—solid method is described. In this method, silicon substrates coated with a thin layer of gold were heat treated in nitrogen ambient. Gold particles started to diffuse into the silicon substrate and Au—Si alloy formed at the interface. The alloy would have molten to form liquid droplets on the substrate when temperature increases above their eutectic point, and more Si atoms diffused into these alloy droplets when heating continues. Rapid cooling of the droplet surface due to nitrogen flow into the chamber would eventually lead to the phase separation of silicon atoms from the surface of the alloy, created the nucleation and thus the growth of silicon nanowires. Controlled growth of the nanowire could be achieved by annealing the sample at 1000 ˚C with nitrogen flow rate set to around 1.5 l/min. The synthesized nanowires with diameter varied from 30 to 70 nm, were straight and grew along the N2 flow. Larger amount and longer nanowires were grown when longer period of heating was applied. Nanowires with lengths more than several hundreds of micrometers were achieved by annealing the sample for 4 h.