Spin current, spin accumulation and spin Hall effect
Source abstract
Abstract
Nonlocal spin transport in nanostructured devices with ferromagnetic injector (F1) and detector (F2) electrodes connected to a normal conductor (N) is studied. We reveal how the spin transport depends on interface resistance, electrode resistance, spin polarization and spin diffusion length, and obtain the conditions for efficient spin injection, spin accumulation and spin current in the device. It is demonstrated that the spin Hall effect is caused by spin-orbit scattering in nonmagnetic conductors and gives rise to the conversion between spin and charge currents in a nonlocal device. A method of evaluating spin-orbit coupling in nonmagnetic metals is proposed.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Quantum and electron transport phenomena · Magnetic properties of thin films · Surface and Thin Film Phenomena
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
CREST, Japan Science and Technology Agency (JST), Kawaguchi 332-0012, Japan
Centre for Advanced Study, Norwegian Academy of Science and Letters, Drammensveien 78, N-0271 Oslo, Norway
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