Measurements of Temperature Distribution in Melting Zone
Source abstract
Abstract
The paper presents experimental results obtained with the help of an OS25III TV camera in analyzing the melting zone in silicon. Even though the general regularities in the brightness distribution characterizing the liquid phase are the same as in the solid phase, there are specific features in the character of the distribution. The measured brightness contrast in the region of phase transition is 0.157, which is in satisfactory agreement with the theoretical prediction.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Thin-Film Transistor Technologies · Surface Roughness and Optical Measurements
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (4)
Show source-provided references
1. Paton, B.E. and Lapchinskii, V.F., Svarka i rodstvennye tekhnologii v kosmose (Welding and Related Technologies in Space), Kiev: Nauchnaya Mysl', 1998.
2. Porev, V.A., Monitoring of Zone Purification Using TV Devices, Defektoskopiya, 1997, no. 6, pp. 50-51.
3. Allen, F.G., Emissivity at 0.65 Micron of Silicon and Germanium at High Temperatures, J. Appl. Phys., 1957, no. 12, pp. 1510-1511.10.1063/1.1722688 ↗
4. Gurevich, M.M., Fotometriya (teoriya, metody i pribory) (Photometry (Theory, Methods, and Instruments)), Leningrad: Energoatomizdat, 1983.