ATOMIC LAYER DEPOSITION OF TIN DIOXIDENANOFILMS: A REVIEW

Due to unique electrical, optical, chemical and magnetic properties of tin dioxide, SnO 2 thin films attract enormous attention as a potential material for gas sensor devices, transparent conducting oxides for microelectronics, lithium-ion batteries, supercapasitors, spintronic de- vices, solar cells, etc. Thin films possessing a wide variety of properties determined by thick- ness, morphology, structural properties, and film composition are necessary to satisfy the re- quirements of such a wide range of applications. At present, there are many approaches for SnO 2 thin films manufacturing, the Atomic Layer Deposition (ALD) technology is considered to be the most promising and suitable method to produce thin film with a set of certain characteristics. In this paper, we present an overview of achievements in SnO 2 ALD thin film preparation. The special attention is given to the selection of precursors, deposition conditions, and deposited films properties.