Tuning the Double Layer of Graphene Oxide through Phosphorus Doping for Enhanced Supercapacitance
Source abstract
Abstract
The electrochemical double layer plays a fundamental role in energy storage applications. Control of the distribution of ions in the double layer at the atomistic scale offers routes to enhanced material functionality and device performance. Here we demonstrate how the addition of an element from the third row of the periodic table, phosphorus, to graphene oxide increases the measured capacitance and present density functional theory calculations that relate the enhanced charge storage to structural changes of the electrochemical double layer. Our results point to how rational design of materials at the atomistic scale can lead to improvements in their performance for energy storage.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Supercapacitor Materials and Fabrication · Advancements in Battery Materials · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials, Imperial College London, London SW7 2AZ, U.K.
London Centre for Nanotechnology, London SW7 2AZ, U.K.
Thomas Young Centre at Imperial College London, London SW7 2AZ, U.K.
School of Engineering, Cardiff University, Cardiff CF24 3AA, U.K.
Funding
Engineering and Physical Sciences Research Council · Royal Society · Imperial College London · FP7 People: Marie-Curie Actions · Science and Technology Facilities Council · Thomas Young Centre
References (26)
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