journal article·2018-04-13Open access

Balancing Charge Carrier Transport in a Quantum Dot P–N Junction toward Hysteresis-Free High-Performance Solar Cells

Yuljae Cho, Bo Hou, Jongchul Lim, Sanghyo Lee, Sangyeon Pak, John Hong, Paul Giraud, A-Rang Jang, Young-Woo Lee, Juwon Lee, Jae Eun Jang, Henry J. Snaith, Stephen M. Morris, Jung Inn Sohn, SeungNam Cha, Jong Min Kim

ACS Energy Letters· Volume 3· Issue 4

Abstract

In a quantum dot solar cell (QDSC) that has an inverted structure, the QD layers form two different junctions between the electron transport layer (ETL) and the other semiconducting QD layer. Recent work on an inverted-structure QDSC has revealed that the junction between the QD layers is the dominant junction, rather than the junction between the ETL and the QD layers, which is in contrast to the conventional wisdom. However, to date, there have been a lack of systematic studies on the role and importance of the QD heterojunction structure on the behavior of the solar cell and the resulting device performance. In this study, we have systematically controlled the structure of the QD junction to balance charge transport, which demonstrates that the position of the junction has a significant effect on the hysteresis effect, fill factor, and solar cell performance and is attributed to balanced charge transport.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Perovskite Materials and Applications · Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United Kingdom

Department of Physics, Clarendon Laboratory, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom

Department of Energy Systems, Soonchunhyang University, Asan, Chungcheongnamdo 31538, Republic of Korea

Department of Information and Communication Engineering, Daegu Gyeongbuk Institute of Science and Technology, Daegu 711-873, Republic of Korea

Division of Physics and Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea

Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom

Funding

National Research Foundation of Korea · Horizon 2020 Framework Programme · FP7 Ideas: European Research Council

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