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journal article·2024-02-09

High-Affinity Ligand-Enhanced Passivation of Group III–V Colloidal Quantum Dots for Sensitive Near-Infrared Photodetection

Byung Ku Jung, Hyeri Yoo, Bogyeom Seo, Hyung Jin Choi, Young Kyun Choi, Tae Hyuk Kim, Nuri Oh, Soo Young Kim, Sangtae Kim, Yunki Lee, Jae Won Shim, Hye Yeon Park, Gyu Weon Hwang, Tse Nga Ng, Soong Ju Oh

ACS Energy Letters· Volume 9· Issue 2
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Source abstract

Abstract

Group III–V colloidal quantum dots (CQDs) are promising infrared-absorbing materials that overcome the limitations of their regulated heavy-metal-containing counterparts, including Pb-, Cd-, and Hg-based materials. However, their surfaces and ligand chemistry remain unexplored, impeding sufficient ligand exchange. Therefore, approaches for selecting suitable exchange/passivation-enabling ligands for group III–V CQDs must be devised. Based on the hard–soft acid–base theory, diverse metal halide ligands and their interactions with InAs CQD surfaces were scrutinized in this study. Experimental investigations and density functional theory calculations indicated that hard-type Sn-based metal halide ligands exhibited a high affinity for the hard-type As-rich surface of InAs CQDs. Attaching different halides (X) affected the photoresponse performance of InAs-CQD-based devices. Here, high-affinity SnBr 2 ligands were selected to fabricate the InAs-CQD-based photodiode, which exhibited the highest external quantum efficiency of 43.1% and responsivity of 0.36 A W –1 at an exciton peak of 1020 nm among previously reported InAs-CQD-based photodiodes.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Quantum Dots Synthesis And Properties · Nanocluster Synthesis and Applications · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering, Korea University, 145, Anam-ro Seongbuk-gu, Seoul 02841, Republic of Korea

Center for Neuromorphic Engineering, Korea Institute of Science and Technology, 5 Hwarang-ro 14-gil Seongbuk-gu Seoul 02792, Republic of Korea

Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, California 92093-0407, United States

School of Electrical Engineering, Korea University, Seoul 02841, Republic of Korea

Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul 15588, Republic of Korea

Department of Nuclear Engineering, Hanyang University, 222 Wangsimni-ro Seongdong-gu, Seoul 04763, Republic of Korea

Samsung Electronics Co. Ltd., Yongin-si, Gyeonggi-do 11677, Republic of Korea

Funding

Samsung · National Research Foundation of Korea · National Science Foundation · the Technology Innovation Program(korea-led of K-Sensor technology for market leadership) funded By the Ministry of Trade, Industry & Energy(MOTIE, Korea) · KIST Institution Program

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