DataVXACS Energy LettersPaper
journal article·2017-04-14

Suppressing Deep Traps in PbS Colloidal Quantum Dots via Facile Iodide Substitutional Doping for Solar Cells with Efficiency >10%

Alexandros Stavrinadis, Santanu Pradhan, Paris Papagiorgis, Grigorios Itskos, Gerasimos Konstantatos

ACS Energy Letters· Volume 2· Issue 4
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Source abstract

Abstract

Surface passivation of PbS colloidal quantum dots (QDs) with iodide has been used in highly efficient solar cells. Iodide passivation is typically achieved by ligand-exchange processes on QD films. Complementary to this approach, herein we present a nonintrusive solution-based strategy for doping QDs with iodide to further optimize solar cell performance. The doping step is applied in situ at the end of the synthesis of the QDs. The optimum precursor I/Pb ratio is found to be in the 1.5–3% range at which iodide substitutes S without excessively altering the dots’ surface chemistry. This allows for band engineering and decreasing the density of deep trap states of the QDs, which taken together lead to PbS QD solar cells with efficiency in excess of 10%.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Nanocluster Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, 08860 Castelldefels (Barcelona), Spain

Department of Physics, Experimental Condensed Matter Physics Laboratory, University of Cyprus, Nicosia 1678, Cyprus

ICREA—Institució Catalana de Recerca i Estudis Avançats, Passeig Lluís Companys 23, 08010 Barcelona, Spain

Funding

European Regional Development Fund · Ministerio de Econom?a y Competitividad · Ag?ncia de Gesti? d?Ajuts Universitaris i de Recerca · H2020 European Research Council · Seventh Framework Programme

References (23)

Show source-provided references
1. 10.1021/acs.nanolett.6b0195710.1021/acs.nanolett.6b01957 ↗
2. 10.1038/srep0994510.1038/srep09945 ↗
3. 10.1038/nnano.2012.12710.1038/nnano.2012.127 ↗
4. 10.1021/acsami.6b0101810.1021/acsami.6b01018 ↗
5. 10.1002/adma.20120282510.1002/adma.201202825 ↗
6. 10.1038/nmat311810.1038/nmat3118 ↗
7. 10.1063/1.478943410.1063/1.4789434 ↗
8. 10.1021/nn800471c10.1021/nn800471c ↗
9. 10.1038/nmat398410.1038/nmat3984 ↗
10. 10.1021/nn500897c10.1021/nn500897c ↗
11. 10.1002/adma.20120294210.1002/adma.201202942 ↗
12. 10.1038/nmat403210.1038/nmat4032 ↗
13. 10.1021/nn303364d10.1021/nn303364d ↗
14. 10.1038/nenergy.2016.3510.1038/nenergy.2016.35 ↗
15. 10.1002/adma.20150365710.1002/adma.201503657 ↗
16. 10.1002/adma.20150115610.1002/adma.201501156 ↗
17. 10.1002/adma.20140057710.1002/adma.201400577 ↗
18. 10.1021/nl080373e10.1021/nl080373e ↗
19. 10.1021/jp050745x10.1021/jp050745x ↗
20. Lakowicz J. R. · 200610.1007/978-0-387-46312-4 ↗
21. 10.1016/0169-4332(94)90080-910.1016/0169-4332(94)90080-9 ↗
22. 10.1021/nn700334810.1021/nn7003348 ↗
23. 10.1021/nl204323j10.1021/nl204323j ↗