DataVXphysica status solidi (RRL) – Rapid Research LettersPaper
journal article·2010-07Open access

Erratum: Modelling c‐Si/SiNx interface recombination by surface damage

Silke Steingrube, Pietro P. Altermatt, Jan Schmidt, Rolf Brendel

physica status solidi (RRL) – Rapid Research Letters· Volume 4· Issue 7
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Abstract

Abstract Due to an unfortunate conversion error during typesetting, Figure 1 of the Rapid Research Letter by Silke Steingrube et al., published in Phys. Status Solidi RRL 4, No. 3–4, 91–93 (2010), was reproduced with partly wrong labels (especially the assignment of curves in Fig. 1a, b). The correct Figure 1 is presented here. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Research context

OpenAlex topics: Silicon and Solar Cell Technologies · Advanced Surface Polishing Techniques · Thin-Film Transistor Technologies

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