Growth of semipolar (10$ \bar 1\bar 3 $) InN on m ‐plane sapphire using MOVPE

Abstract We report on the growth of semi‐polar InN directly on m ‐plane sapphires by metal‐organic vapor phase epitaxy with different nitridation times from 45 s to 6 min. Surface morphology and crystalline orientation depended on the nitridation time. Semipolar InN with (10$ \bar 1\bar 3 $) dominant orientation was obtained at 2 min and 4 min nitridation, shorter or longer nitridation times showed additional orientations. The (10$ \bar 1\bar 3 $) InN has a roughness about 30 nm (scale size 5 × 5 µm²), likely due to twinning. Low temperature photoluminescence showed emission peaks between 0.72 eV to 0.75 eV, which is slightly below the energy observed for (0001) InN. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)