Radio frequency magnetron sputtered epitaxial Cu2ZnSnS4 thin film on ZnS(100)
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Abstract
Abstract Heteroepitaxial growth of kesterite Cu2ZnSnS4 (CZTS) thin film on cubic ZnS(100) single crystal substrate was achieved by radio frequency magnetron sputtering from a single CZTS target. An optimal substrate temperature in the range of 470–500 °C is found suitable for this epitaxial growth. The growth of CZTS was confirmed to be along a‐axis. The sputtered CZTS thin film is homogeneous throughout the whole film. The band gap of the film is found to be approximately 1.51 eV, i.e., promising for high efficiency thin film solar cells. magnified image Cross‐sectional high resolution TEM image recorded at the interface region of epitaxial CZTS and ZnS(100) substrate. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications
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