Tailoring of Bound Exciton Photoluminescence Emission in WS2 Monolayers
Source abstract
Abstract
Temperature‐ and laser power‐dependent photoluminescence (PL) properties of the asymmetric defect‐bound exciton band in defective WS2 monolayers, grown by chemical vapor deposition, are studied. Based on PL mapping, a monolayer region with an intensive band emission at about 1.9 eV is chosen for further studies. The band is thermally quenched above 180 K, and the thermal activation energy is found to be = 33 ± 4 meV. At = 15 K, the band intensity reveals a sublinear dependence with increasing excitation power and the peak position shows a blueshift of about 15 meV per decade of laser power. It is shown that the band is related to the deep defect states within the band gap of WS2.
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Research context
OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials and Environmental Technology Tallinn University of Technology Ehitajate tee 5 Tallinn 19086 Estonia
Faculty of Physics and CENIDE University of Duisburg-Essen Lotharstr. 1 Duisburg 47057 Germany
Division of Physics Tallinn University of Technology Ehitajate tee 5 Tallinn 19086 Estonia
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