The Structure of Phase‐Change Chalcogenides and Their High‐Pressure Behavior
Source abstract
Abstract
Phase‐change materials (PCMs) used in data storage devices have unique structural features and transition properties by thermal heating. Pressure, as another important thermodynamic tool, can also induce a series of interesting phase transitions in PCMs, accompanied by the altering of bonding nature and physical properties. Here, the structure transition as well as property change of prototypical phase‐change material Ge–Sb–Te (GST) under hydrostatic pressure has been reviewed. The high‐pressure behavior of some other relevant chalcogenides such as GeTe, Sb2Te3, and GeSe, is also discussed. The revealing of structure and property changes due to high pressure sheds light on the underlying physics of many fascinating properties of PCMs, and therefore it will have profound implications on various applications of phase change materials in memory and other fields.
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Solid-state spectroscopy and crystallography
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Wuhan National Research Center for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology Wuhan 430074 China
Funding
National Natural Science Foundation of China
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