Scalability of Sulfur‐Based Ovonic Threshold Selectors for 3D Stackable Memory Applications
Source abstract
Abstract
A two‐terminal selector is an essential element for high‐density 3D stackable memory arrays. Suppressing sneak current, the device also needs to provide extremely high current density to melt‐quench the storage layer in phase‐change memory (PCM). Recently, an ovonic threshold switching (OTS) selector based on amorphous GeS demonstrated a large current density, which seems to be promising for 3D stackable PCM application. Herein, the scalability of GeS OTS selectors is investigated as the device scales down from 200 to 60 nm. Interestingly, the ON/OFF current, threshold voltage, and switching speed hardly change as the device scales down, whereas the ON current density exponentially grows. A large current density, ≈35.4 MA cm−2, is achieved in 60 nm‐sized devices. The high current density endows the GeS selector with great potential for use in high‐density 3D stackable memory applications.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Perovskite Materials and Applications · Phase-change materials and chalcogenides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China
State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Micro-System and Information Technology Chinese Academy of Sciences Shanghai 200050 China
University of Chinese Academy of Sciences Beijing 100029 China
Department of Precision Instrument Tsinghua University Beijing 100084 China
Frontier Institute of Chip and System Fudan University Shanghai 200433 China
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