In Situ Monitoring of GaN Growth in Multiwafer MOVPE Reactors

Normal incidence reflectivity measurements were carried out in an AIX 2000G3HT Multiwafer Planetary Reactor® MOVPE system, a large scale production tool for GaN-based devices. In situ monitoring was used to investigate nucleation behaviour, temperature dependence of GaN growth, and the deposition of GaN/InGaN multiquantum wells, especially the quality of interfaces. The obtained results were compared with RT photoluminescence, and high resolution X-ray measurements.