Deep Traps in Doubly Implanted p-Type Silicon DITS andC—U Measurements
Source abstract
Abstract
The influence of technological impurities on deep level spectra in Si(p) is studied. Defects created by Ne+ ions in samples containing high oxygen and carbon concentration are investigated using DLTS, C—U, and I—U methods. lonization energies and capture cross sections of the observed traps are calculated. For one series of doubly implanted samples after annealing at 600 °C minority carrier traps are observed in the DLTS spectra. For these samples a model of the Schottky junction with a high diffusion barrier and a heavily compensated subsurface layer is proposed.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Semiconductor materials and interfaces · Integrated Circuits and Semiconductor Failure Analysis
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