Amphiphobic Near-Field Electrospinning Triboelectric Layer for Resistance to High Humidity Environment

Triboelectric nanogenerator (TENG) realizes the possibility of self-powering microelectronic devices and solves the energy crisis. Nonetheless, water molecules enter the interior of TENG devices in high humidity environments to form conductive pathways that destroy their performance. To address this issue, a micronanostructure processing approach, near-field electrospinning (NFES) technology, is employed to design and prepare fluoropolyimide (FPI) triboelectric layer surface structures. Hydrophobic FPI fibrous membranes (HFPI FMs) are successfully prepared by combining the self-assembly of ZnO nanowires (NWs) and reduced surface energy post-treatment. More promisingly, the TENG based on HFPI FMs as a negative triboelectric layer provides an open-circuit voltage of 19.0 V, a short-circuit current of 302.9 nA, and a transferred charge of 4.0 nC. The TENG exhibits excellent cycling stability (15,000 cycles) and humidity recovery response (24 s). The amphiphobic properties of HFPI FMs offer great potential for the TENG to resist extreme environments.